Technische Details DI070P04PQ Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 P -40V, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V.
Weitere Produktangebote DI070P04PQ
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DI070P04PQ | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI070P04PQ | Hersteller : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V |
Produkt ist nicht verfügbar |
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![]() |
DI070P04PQ | Hersteller : Diotec Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
DI070P04PQ | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |