DI070P04PQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 P -40V
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V
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Technische Details DI070P04PQ Diotec Semiconductor
Description: MOSFET POWERQFN 5X6 P -40V, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V.
Weitere Produktangebote DI070P04PQ
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DI070P04PQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P |
Produkt ist nicht verfügbar |
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DI070P04PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -300A; 46W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -300A Drain current: -70A Drain-source voltage: -40V Gate charge: 125nC On-state resistance: 6.5mΩ Gate-source voltage: ±20V Power dissipation: 46W Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |
