Technische Details DI075N08PQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6, Case: QFN5x6, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 350A, Drain current: 47A, Drain-source voltage: 80V, Gate charge: 89nC, On-state resistance: 4.2mΩ, Polarisation: unipolar, Gate-source voltage: ±20V, Power dissipation: 45W, Type of transistor: N-MOSFET, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI075N08PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| DI075N08PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 350A Drain current: 47A Drain-source voltage: 80V Gate charge: 89nC On-state resistance: 4.2mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 45W Type of transistor: N-MOSFET Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DI075N08PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 350A Drain current: 47A Drain-source voltage: 80V Gate charge: 89nC On-state resistance: 4.2mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 45W Type of transistor: N-MOSFET Kind of channel: enhancement |
Produkt ist nicht verfügbar |