Technische Details DI0A35N06PGK Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.35A, Pulsed drain current: 1.2A, Power dissipation: 223mW, Case: DFN1006-3, Gate-source voltage: ±20V, On-state resistance: 4Ω, Mounting: SMD, Gate charge: 1.9nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote DI0A35N06PGK
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DI0A35N06PGK | Diotec Semiconductor |
 MOSFETs DFN1006-3, N, 60V, 0.35A, 1.4?, 150C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DI0A35N06PGK | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 1.9nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DI0A35N06PGK |
|
Hersteller: Diotec Semiconductor
MOSFETs DFN1006-3, N, 60V, 0.35A, 1.4?, 150C
MOSFETs DFN1006-3, N, 60V, 0.35A, 1.4?, 150C
Produkt ist nicht verfügbar
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DI0A35N06PGK |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH