DI0A35N06PGK Diotec Semiconductor

Description: DI0A35N06PGK, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 223mW, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Bulk.