DI100N04D1 DIOTEC SEMICONDUCTOR


di100n04d1.pdf Hersteller: DIOTEC SEMICONDUCTOR
DI100N04D1-DIO SMD N channel transistors
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DI100N04D1 DIOTEC SEMICONDUCTOR

Description: MOSFET DPAK N 40V 100A, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 83.3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 20 V.

Weitere Produktangebote DI100N04D1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DI100N04D1 DI100N04D1 Hersteller : Diotec Semiconductor di100n04d1.pdf Description: MOSFET DPAK N 40V 100A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DI100N04D1 DI100N04D1 Hersteller : Diotec Semiconductor di100n04d1.pdf MOSFETs MOSFET, DPAK, 40V, 100A, 150C, N
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH