DI100N10PQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 400A; 250W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 400A
Power dissipation: 250W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4836 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.56 EUR |
| 51+ | 1.42 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
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Produktbewertung abgeben
Technische Details DI100N10PQ DIOTEC SEMICONDUCTOR
Description: MOSFET PWRQFN 5X6 100V 0.0045OHM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V.
Weitere Produktangebote DI100N10PQ nach Preis ab 1.03 EUR bis 7.64 EUR
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DI100N10PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 95A; Idm: 400A; 250W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 400A Power dissipation: 250W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4836 Stücke: Lieferzeit 14-21 Tag (e) |
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DI100N10PQ | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 100V, 80A, 150C, N |
auf Bestellung 3458 Stücke: Lieferzeit 14-28 Tag (e) |
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| DI100N10PQ | Hersteller : Diotec Semiconductor |
MOSFET, PowerQFN 5x6, 100V, 100A, 0, 250W |
Produkt ist nicht verfügbar |
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DI100N10PQ | Hersteller : Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 100V 0.0045OHM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
Produkt ist nicht verfügbar |
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DI100N10PQ | Hersteller : Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 100V 0.0045OHM Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
Produkt ist nicht verfügbar |