DI110N04PQ-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 59nC
On-state resistance: 2.9mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 40V
Power dissipation: 42W
Pulsed drain current: 400A
Application: automotive industry
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 84+ | 0.86 EUR |
| 106+ | 0.68 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.56 EUR |
| 2000+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DI110N04PQ-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET, POWERQFN 5X6, 40V, 110A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DI110N04PQ-AQ nach Preis ab 0.56 EUR bis 1.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DI110N04PQ-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6 Case: QFN5x6 Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 59nC On-state resistance: 2.9mΩ Gate-source voltage: ±20V Drain current: 110A Drain-source voltage: 40V Power dissipation: 42W Pulsed drain current: 400A Application: automotive industry Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
DI110N04PQ-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 5X6, 40V, 110A, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4787 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DI110N04PQ-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, 40V, 110A, 150C, N, AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DI110N04PQ-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DI110N04PQ-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 110 A, 0.0025 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 55.5W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
DI110N04PQ-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DI110N04PQ-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 110 A, 0.0025 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 55.5W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0025ohm |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| DI110N04PQ-AQ | Hersteller : Diotec Semiconductor |
N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
DI110N04PQ-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 5X6, 40V, 110A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |