DI110N04PQ-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 59nC
On-state resistance: 2.9mΩ
Gate-source voltage: ±20V
Drain current: 110A
Drain-source voltage: 40V
Power dissipation: 42W
Pulsed drain current: 400A
Application: automotive industry
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 45+ | 1.62 EUR |
| 70+ | 1.02 EUR |
| 104+ | 0.69 EUR |
| 500+ | 0.55 EUR |
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Technische Details DI110N04PQ-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET, POWERQFN 5X6, 40V, 110A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DI110N04PQ-AQ nach Preis ab 0.57 EUR bis 2.43 EUR
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DI110N04PQ-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, 40V, 110A, 150C, N, AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DI110N04PQ-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 5X6, 40V, 110A, Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-QFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4786 Stücke: Lieferzeit 10-14 Tag (e) |
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