DI110N04PQ Diotec Semiconductor


di110n04pq.pdf Hersteller: Diotec Semiconductor
MOSFET, PowerQFN 5x6, 40V, 110A, 0, 42W
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Technische Details DI110N04PQ Diotec Semiconductor

Description: MOSFET POWERQFN 5X6 N 40V, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V, Power Dissipation (Max): 55.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V.

Weitere Produktangebote DI110N04PQ

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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DI110N04PQ DI110N04PQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6ACE2A329CC60CE&compId=di110n04pq.pdf?ci_sign=a8145b3f0ed95be48b0f8c4fdb24c2859374e34b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Drain current: 110A
Drain-source voltage: 40V
Gate charge: 59nC
On-state resistance: 2.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 42W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Anzahl je Verpackung: 5000 Stücke
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DI110N04PQ DI110N04PQ Hersteller : Diotec Semiconductor di110n04pq.pdf Description: MOSFET POWERQFN 5X6 N 40V
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Power Dissipation (Max): 55.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
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DI110N04PQ DI110N04PQ Hersteller : Diotec Semiconductor di110n04pq.pdf MOSFETs MOSFET, PowerQFN 5x6, 40V, 110A, 150C, N
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DI110N04PQ DI110N04PQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6ACE2A329CC60CE&compId=di110n04pq.pdf?ci_sign=a8145b3f0ed95be48b0f8c4fdb24c2859374e34b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Drain current: 110A
Drain-source voltage: 40V
Gate charge: 59nC
On-state resistance: 2.9mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 42W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
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