DI110N04PQ Diotec Semiconductor
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Technische Details DI110N04PQ Diotec Semiconductor
Description: IC, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V, Power Dissipation (Max): 55.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V.
Weitere Produktangebote DI110N04PQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DI110N04PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 42W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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DI110N04PQ | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V Power Dissipation (Max): 55.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V |
Produkt ist nicht verfügbar |
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DI110N04PQ | Hersteller : Diotec Semiconductor | MOSFET MOSFET, PowerQFN 5x6, 40V, 110A, 150C, N |
Produkt ist nicht verfügbar |
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DI110N04PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 42W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Pulsed drain current: 400A Power dissipation: 42W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |