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DI110N06D2

DI110N06D2 Diotec Semiconductor

di110n06d2.pdf Hersteller: Diotec Semiconductor
Description: MOSFET, D2PAK, 60V, 110A, 150C,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
auf Bestellung 798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.26 EUR
10+2.75 EUR
100+1.89 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI110N06D2 Diotec Semiconductor

Description: MOSFET, D2PAK, 60V, 110A, 150C,, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V.

Weitere Produktangebote DI110N06D2 nach Preis ab 1.24 EUR bis 4.31 EUR

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DI110N06D2 DI110N06D2 Hersteller : Diotec Semiconductor di110n06d2.pdf MOSFETs MOSFET, D2PAK, 60V, 110A, 150C, N
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.31 EUR
10+3.4 EUR
100+2.04 EUR
800+1.34 EUR
2400+1.26 EUR
4800+1.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DI110N06D2 Hersteller : Diotec Semiconductor di110n06d2.pdf MOSFET, D2PAK, N, 60V, 110A, 0.0032
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DI110N06D2 DI110N06D2 Hersteller : Diotec Semiconductor di110n06d2.pdf Description: MOSFET, D2PAK, 60V, 110A, 150C,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4597 pF @ 25 V
Produkt ist nicht verfügbar
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DI110N06D2 DI110N06D2 Hersteller : DIOTEC SEMICONDUCTOR di110n06d2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; Idm: 480A; 62.5W
Mounting: SMD
Case: D2PAK; TO263AB
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 62.5W
Drain-source voltage: 60V
Pulsed drain current: 480A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 75nC
Drain current: 70A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH