DI114N06PQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: QFN5x6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain current: 72.5A
On-state resistance: 2.5mΩ
Power dissipation: 63.8W
Gate charge: 78.5nC
Gate-source voltage: ±20V
Pulsed drain current: 480A
Drain-source voltage: 65V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4994 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 37+ | 1.97 EUR |
| 41+ | 1.77 EUR |
| 53+ | 1.36 EUR |
| 56+ | 1.29 EUR |
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Technische Details DI114N06PQ DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 114A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Power Dissipation (Max): 63.8W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V.
Weitere Produktangebote DI114N06PQ nach Preis ab 1.29 EUR bis 2.29 EUR
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DI114N06PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Case: QFN5x6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: 72.5A On-state resistance: 2.5mΩ Power dissipation: 63.8W Gate charge: 78.5nC Gate-source voltage: ±20V Pulsed drain current: 480A Drain-source voltage: 65V |
auf Bestellung 4994 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI114N06PQ | Hersteller : Diotec Semiconductor | DI114N06PQ |
auf Bestellung 4994 Stücke: Lieferzeit 14-21 Tag (e) |
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DI114N06PQ | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 63.8W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V |
Produkt ist nicht verfügbar |