DI114N06PQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 72.5A; Idm: 480A; 63.8W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 72.5A
Pulsed drain current: 480A
Power dissipation: 63.8W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 78.5nC
Kind of package: reel; tape
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 40+ | 1.83 EUR |
| 44+ | 1.64 EUR |
| 50+ | 1.44 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.23 EUR |
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Technische Details DI114N06PQ DIOTEC SEMICONDUCTOR
Description: IC, Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V, Drain to Source Voltage (Vdss): 65 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-QFN (5x6), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 63.8W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 114A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.
Weitere Produktangebote DI114N06PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DI114N06PQ | Hersteller : Diotec Semiconductor |
Description: IC Input Capacitance (Ciss) (Max) @ Vds: 4130 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 78.5 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-QFN (5x6) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 63.8W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 114A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
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