DI150N03PQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET, 30V, 150A, 86W
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1250+ | 3.59 EUR |
| 2500+ | 2.78 EUR |
| 5000+ | 1.88 EUR |
| 10000+ | 1.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DI150N03PQ Diotec Semiconductor
Description: MOSFET, 30V, 150A, 86W, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V.
Weitere Produktangebote DI150N03PQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DI150N03PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 350A; 80W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 350A Power dissipation: 80W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 1607nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|
 |
DI150N03PQ | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7460 pF @ 15 V |
Produkt ist nicht verfügbar |
|
 |
DI150N03PQ | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 30V, 150A, 150C, N |
Produkt ist nicht verfügbar |
|
|
|
DI150N03PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 350A; 80W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 350A Power dissipation: 80W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 1607nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |