DI200N04D2 Diotec Semiconductor

Description: MOSFET D2PAK N 40V 200A, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 5832 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AB (D2PAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 225W (Tc), Rds On (Max) @ Id, Vgs: 1.55mOhm @ 120A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.