DI200N04PQ

DI200N04PQ Diotec Semiconductor


Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N
auf Bestellung 4968 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.78 EUR
10+2.76 EUR
100+2.01 EUR
500+1.92 EUR
5000+1.56 EUR
10000+1.54 EUR
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Technische Details DI200N04PQ Diotec Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 800A; 180W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 165A, Pulsed drain current: 800A, Power dissipation: 180W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 1.3mΩ, Mounting: SMD, Gate charge: 92nC, Kind of package: reel; tape, Kind of channel: enhancement.

Weitere Produktangebote DI200N04PQ

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DI200N04PQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF95C3875AC98880D6&compId=di200n04pq.pdf?ci_sign=9f641b212d3ecb9a53ba8d6e5d14c011862d4df8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 800A; 180W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 165A
Pulsed drain current: 800A
Power dissipation: 180W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
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Im Einkaufswagen  Stück im Wert von  UAH