DI200N04PQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Produktrezensionen
Produktbewertung abgeben
Technische Details DI200N04PQ Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 8-QFN (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel.
Weitere Produktangebote DI200N04PQ nach Preis ab 1.83 EUR bis 5.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DI200N04PQ | Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N |
auf Bestellung 4968 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DI200N04PQ | Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-QFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DI200N04PQ |
|
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N
MOSFETs MOSFET, PowerQFN 5x6, 40V, 200A, 150C, N
auf Bestellung 4968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.5 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.39 EUR |
| 500+ | 2.28 EUR |
| 5000+ | 1.86 EUR |
| 10000+ | 1.83 EUR |
| DI200N04PQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET PWRQFN 5X6 40V 0.0013OHM
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5768 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-QFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.95 EUR |
| 10+ | 3.87 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.3 EUR |