DI200N10D2 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 185A; Idm: 950A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 185A
Pulsed drain current: 950A
Power dissipation: 340W
Case: D2PAK; TO263AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 262nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.85 EUR |
| 29+ | 2.53 EUR |
| 50+ | 1.46 EUR |
| 53+ | 1.37 EUR |
| 1600+ | 1.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DI200N10D2 DIOTEC SEMICONDUCTOR
Description: MOSFET D2PAK N 100V 200A, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AB (D2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 50 V.
Weitere Produktangebote DI200N10D2 nach Preis ab 1.37 EUR bis 5.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DI200N10D2 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 185A; Idm: 950A; 340W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 185A Pulsed drain current: 950A Power dissipation: 340W Case: D2PAK; TO263AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 262nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
DI200N10D2 | Hersteller : Diotec Semiconductor |
Description: MOSFET D2PAK N 100V 200A Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AB (D2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 50 V |
auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
|