DI200N10D2 Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET D2PAK N 100V 200A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 50 V
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 3.57 EUR |
| 100+ | 2.48 EUR |
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Technische Details DI200N10D2 Diotec Semiconductor
Description: MOSFET D2PAK N 100V 200A, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 120A, 10V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AB (D2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16800 pF @ 50 V.
Weitere Produktangebote DI200N10D2 nach Preis ab 1.32 EUR bis 2.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DI200N10D2 | Hersteller : DIOTEC SEMICONDUCTOR |
DI200N10D2-DIO SMD N channel transistors |
auf Bestellung 533 Stücke: Lieferzeit 7-14 Tag (e) |
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