DI280N10TL Diotec Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 7.09 EUR |
| 10+ | 4.7 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.41 EUR |
| 1000+ | 3.2 EUR |
| 2000+ | 2.85 EUR |
| 4000+ | 2.76 EUR |
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Technische Details DI280N10TL Diotec Semiconductor
Description: MOSFET N-CH 100V 280A 8-POWERSFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 280A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 425mW (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 50 V.
Weitere Produktangebote DI280N10TL nach Preis ab 4.69 EUR bis 7.11 EUR
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DI280N10TL | Hersteller : Diotec Semiconductor |
 Description: MOSFET N-CH 100V 280A 8-POWERSFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 425mW (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 50 V |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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