DI2A2N100D1K Diotec Semiconductor


di2a2n100d1k.pdf
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 1000V 2.2A TO-252-3
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.07 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI2A2N100D1K Diotec Semiconductor

Description: MOSFET N-CH 1000V 2.2A TO-252-3, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote DI2A2N100D1K nach Preis ab 1.18 EUR bis 3.81 EUR

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DI2A2N100D1K DI2A2N100D1K Diotec Semiconductor di2a2n100d1k.pdf MOSFETs
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.72 EUR
10+2.92 EUR
100+1.75 EUR
500+1.74 EUR
1000+1.68 EUR
2500+1.25 EUR
5000+1.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DI2A2N100D1K DI2A2N100D1K Diotec Semiconductor di2a2n100d1k.pdf Description: MOSFET N-CH 1000V 2.2A TO-252-3
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 4132 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.3 EUR
1000+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI2A2N100D1K di2a2n100d1k.pdf
Hersteller: Diotec Semiconductor
MOSFETs
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.72 EUR
10+2.92 EUR
100+1.75 EUR
500+1.74 EUR
1000+1.68 EUR
2500+1.25 EUR
5000+1.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DI2A2N100D1K di2a2n100d1k.pdf
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 1000V 2.2A TO-252-3
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 4132 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
10+2.43 EUR
100+1.64 EUR
500+1.3 EUR
1000+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH