DI2A7N70D1K Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 700V 2.7A TO-252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 34.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V
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Technische Details DI2A7N70D1K Diotec Semiconductor
Description: MOSFET N-CH 700V 2.7A TO-252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V, Power Dissipation (Max): 34.4W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V.
Weitere Produktangebote DI2A7N70D1K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DI2A7N70D1K | Diotec Semiconductor |
Description: MOSFET N-CH 700V 2.7A TO-252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 34.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
DI2A7N70D1K | Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 700V, 2.7A, 150C, N |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DI2A7N70D1K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 1.7A; Idm: 6A; 34.4W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 1.7A Power dissipation: 34.4W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 6A Gate charge: 5.8nC Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DI2A7N70D1K |
|
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 700V 2.7A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 34.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V
Description: MOSFET N-CH 700V 2.7A TO-252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 34.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 350 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DI2A7N70D1K |
|
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, DPAK, 700V, 2.7A, 150C, N
MOSFETs MOSFET, DPAK, 700V, 2.7A, 150C, N
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DI2A7N70D1K |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.7A; Idm: 6A; 34.4W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.7A
Power dissipation: 34.4W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 6A
Gate charge: 5.8nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 1.7A; Idm: 6A; 34.4W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 1.7A
Power dissipation: 34.4W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 6A
Gate charge: 5.8nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH