DI4A7P06SQ2 Diotec Semiconductor
auf Bestellung 3994 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.6 EUR |
26+ | 2.05 EUR |
100+ | 1.23 EUR |
500+ | 1.21 EUR |
1000+ | 1.18 EUR |
2000+ | 1.04 EUR |
4000+ | 0.98 EUR |
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Technische Details DI4A7P06SQ2 Diotec Semiconductor
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; Idm: -30A; 3W; SO8, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -4.7A, Pulsed drain current: -30A, Power dissipation: 3W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: SMD, Gate charge: 8.5nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI4A7P06SQ2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DI4A7P06SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; Idm: -30A; 3W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -30A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI4A7P06SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -4.7A; Idm: -30A; 3W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -30A Power dissipation: 3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |