DI4A7P06SQ2 Diotec Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.05 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.76 EUR |
| 2000+ | 0.64 EUR |
| 4000+ | 0.58 EUR |
| 8000+ | 0.52 EUR |
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Technische Details DI4A7P06SQ2 Diotec Semiconductor
Description: MOSFET 2P-CH 60V 4.7A 8SO, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V, Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 3W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DI4A7P06SQ2 nach Preis ab 0.79 EUR bis 2.4 EUR
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DI4A7P06SQ2 | Diotec Semiconductor |
 Description: MOSFET 2P-CH 60V 4.7A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3886 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI4A7P06SQ2 |
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Hersteller: Diotec Semiconductor
Description: MOSFET 2P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 60V 4.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 14+ | 1.52 EUR |
| 50+ | 1.13 EUR |
| 100+ | 1 EUR |
| 500+ | 0.79 EUR |