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DI4A7P06SQ2

DI4A7P06SQ2 Diotec Semiconductor

di4a7p06sq2.pdf Hersteller: Diotec Semiconductor
Description: MOSFET SO8 P -60V -4.7A 0.075OHM
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.47 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI4A7P06SQ2 Diotec Semiconductor

Description: MOSFET SO8 P -60V -4.7A 0.075OHM, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V, Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DI4A7P06SQ2 nach Preis ab 0.47 EUR bis 1.69 EUR

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DI4A7P06SQ2 DI4A7P06SQ2 Hersteller : Diotec Semiconductor di4a7p06sq2.pdf Description: MOSFET SO8 P -60V -4.7A 0.075OHM
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 30V
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
17+1.07 EUR
100+0.74 EUR
500+0.62 EUR
1000+0.52 EUR
2000+0.47 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DI4A7P06SQ2 DI4A7P06SQ2 Hersteller : Diotec Semiconductor di4a7p06sq2.pdf MOSFETs MOSFET, SO-8, -60V, -4.7A, 150C, P
auf Bestellung 3938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.69 EUR
10+1.34 EUR
100+0.8 EUR
500+0.79 EUR
1000+0.77 EUR
2000+0.68 EUR
4000+0.64 EUR
Mindestbestellmenge: 2
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DI4A7P06SQ2 Hersteller : Diotec Semiconductor di4a7p06sq2.pdf SMD MOSFET
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DI4A7P06SQ2 Hersteller : DIOTEC SEMICONDUCTOR di4a7p06sq2.pdf DI4A7P06SQ2-DIO Multi channel transistors
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