DI5A7N65D1K-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET, DPAK, 650V, 5.7A, 150C,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.26 EUR |
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Technische Details DI5A7N65D1K-AQ Diotec Semiconductor
Description: MOSFET, DPAK, 650V, 5.7A, 150C,, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI5A7N65D1K-AQ nach Preis ab 1.11 EUR bis 3.96 EUR
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DI5A7N65D1K-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101 |
auf Bestellung 2427 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI5A7N65D1K-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI5A7N65D1K-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, DPAK, 650V, 5.7A, 150C, Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DI5A7N65D1K-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
Produkt ist nicht verfügbar |