DI7A5N65D2K-AQ DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Case: D2PAK; TO263AB
On-state resistance: 0.43Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Power dissipation: 62.5W
Version: ESD
Gate charge: 18.4nC
Gate-source voltage: ±30V
Pulsed drain current: 25A
Drain current: 4.7A
Anzahl je Verpackung: 1 Stücke
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Technische Details DI7A5N65D2K-AQ DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Case: D2PAK; TO263AB, On-state resistance: 0.43Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry, Power dissipation: 62.5W, Version: ESD, Gate charge: 18.4nC, Gate-source voltage: ±30V, Pulsed drain current: 25A, Drain current: 4.7A, Anzahl je Verpackung: 1 Stücke.
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DI7A5N65D2K-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 25A; 62.5W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: D2PAK; TO263AB On-state resistance: 0.43Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Power dissipation: 62.5W Version: ESD Gate charge: 18.4nC Gate-source voltage: ±30V Pulsed drain current: 25A Drain current: 4.7A |
Produkt ist nicht verfügbar |