DI7A6N04SQ2 Diotec Semiconductor
auf Bestellung 3986 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.76 EUR |
| 10+ | 1.49 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.92 EUR |
| 4000+ | 0.58 EUR |
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Technische Details DI7A6N04SQ2 Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 7.6A, Pulsed drain current: 50A, Power dissipation: 3.1W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 32mΩ, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI7A6N04SQ2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DI7A6N04SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DI7A6N04SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7.6A; Idm: 50A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |