DI7A6N04SQ2 Diotec Semiconductor
auf Bestellung 3982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.33 EUR |
| 10+ | 1.04 EUR |
| 100+ | 0.62 EUR |
| 1000+ | 0.6 EUR |
| 2000+ | 0.53 EUR |
| 4000+ | 0.5 EUR |
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Technische Details DI7A6N04SQ2 Diotec Semiconductor
Description: MOSFET SO8 N 40V 0.028OHM 150C, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V, Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI7A6N04SQ2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DI7A6N04SQ2 | Hersteller : DIOTEC SEMICONDUCTOR |
 DI7A6N04SQ2-DIO Multi channel transistors |
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DI7A6N04SQ2 | Hersteller : Diotec Semiconductor |
Description: MOSFET SO8 N 40V 0.028OHM 150C Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DI7A6N04SQ2 | Hersteller : Diotec Semiconductor |
Description: MOSFET SO8 N 40V 0.028OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |