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DI7A6N04SQ2

DI7A6N04SQ2 Diotec Semiconductor

di7a6n04sq2.pdf Hersteller: Diotec Semiconductor
Description: MOSFET 2N-CH 40V 7.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.59 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
2000+0.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI7A6N04SQ2 Diotec Semiconductor

Description: MOSFET 2N-CH 40V 7.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V, Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DI7A6N04SQ2 nach Preis ab 0.5 EUR bis 1.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DI7A6N04SQ2 DI7A6N04SQ2 Hersteller : Diotec Semiconductor di7a6n04sq2.pdf MOSFET MOSFET, SO-8, 40V, 7.6A, 150C, N
auf Bestellung 3982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.33 EUR
10+1.04 EUR
100+0.62 EUR
1000+0.6 EUR
2000+0.53 EUR
4000+0.5 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DI7A6N04SQ2 DI7A6N04SQ2 Hersteller : Diotec Semiconductor di7a6n04sq2.pdf Description: MOSFET 2N-CH 40V 7.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 20V
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH