DI7A6N10SQ Diotec Semiconductor
auf Bestellung 3888 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.65 EUR |
| 25+ | 2.08 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.2 EUR |
| 2000+ | 1.06 EUR |
| 4000+ | 0.99 EUR |
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Technische Details DI7A6N10SQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 7.6A, Pulsed drain current: 200A, Power dissipation: 2.5W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 28mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI7A6N10SQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DI7A6N10SQ | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.6A Pulsed drain current: 200A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI7A6N10SQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 7.6A; Idm: 200A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.6A Pulsed drain current: 200A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |