DI7A6N10SQ Diotec Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.36 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.78 EUR |
| 2000+ | 0.69 EUR |
| 4000+ | 0.65 EUR |
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Technische Details DI7A6N10SQ Diotec Semiconductor
Description: MOSFET N-CH 100V 7.6A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DI7A6N10SQ nach Preis ab 0.5 EUR bis 1.87 EUR
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DI7A6N10SQ | Hersteller : Diotec Semiconductor |
 Description: MOSFET N-CH 100V 7.6A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3858 Stücke: Lieferzeit 10-14 Tag (e) |
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