DIF065SIC020 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 300A
Power dissipation: 550W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
| Anzahl | Preis |
|---|---|
| 3+ | 34.25 EUR |
| 5+ | 29.67 EUR |
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Technische Details DIF065SIC020 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 100A, Pulsed drain current: 300A, Power dissipation: 550W, Case: TO247-4, Gate-source voltage: -5...18V, On-state resistance: 16mΩ, Mounting: THT, Gate charge: 236nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.
Weitere Produktangebote DIF065SIC020 nach Preis ab 33.04 EUR bis 49.76 EUR
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DIF065SIC020 | Hersteller : Diotec Semiconductor | SiC MOSFETs 650V TO-247-4L, N, 150A, 650V, 20m?, 175DegC |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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