DIF120SIC022-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Application: automotive industry
| Anzahl | Privatkunde |
|---|---|
| 2+ | 75.59 EUR |
| 5+ | 70.69 EUR |
| 30+ | 66.12 EUR |
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Technische Details DIF120SIC022-AQ DIOTEC SEMICONDUCTOR
Description: SIC MOSFET, TO-247-4L, N, 120A,, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -4V, Drive Voltage (Max Rds On, Min Rds On): 18V, Grade: Automotive, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4V @ 23.5mA, Power Dissipation (Max): 340W (Tc), Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote DIF120SIC022-AQ nach Preis ab 93.15 EUR bis 406.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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DIF120SIC022-AQ | Diotec Semiconductor |
Description: SIC MOSFET, TO-247-4L, N, 120A, Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -4V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 4V @ 23.5mA Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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DIF120SIC022-AQ | Diotec Semiconductor |
SiC MOSFETs SiC MOSFET, TO-247-4L, 0, 120A, 1200V, 0.0223?, Automotive |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| DIF120SIC022-AQ |
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Hersteller: Diotec Semiconductor
Description: SIC MOSFET, TO-247-4L, N, 120A,
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 23.5mA
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SIC MOSFET, TO-247-4L, N, 120A,
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -4V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4V @ 23.5mA
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 122.17 EUR |
| 30+ | 93.15 EUR |
| DIF120SIC022-AQ |
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Hersteller: Diotec Semiconductor
SiC MOSFETs SiC MOSFET, TO-247-4L, 0, 120A, 1200V, 0.0223?, Automotive
SiC MOSFETs SiC MOSFET, TO-247-4L, 0, 120A, 1200V, 0.0223?, Automotive
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 406.65 EUR |
| 10+ | 317.93 EUR |
| 120+ | 190.67 EUR |