DIF120SIC053-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 46A
Pulsed drain current: 100A
Power dissipation: 278W
Case: TO247-4
Gate-source voltage: -4...18V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.58 EUR |
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Technische Details DIF120SIC053-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET TO-247-4L N 65A 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 9.5mA, Supplier Device Package: TO-247-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote DIF120SIC053-AQ nach Preis ab 24.58 EUR bis 125.49 EUR
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DIF120SIC053-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 100A Power dissipation: 278W Case: TO247-4 Gate-source voltage: -4...18V On-state resistance: 65mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DIF120SIC053-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET TO-247-4L N 65A 1200V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 9.5mA Supplier Device Package: TO-247-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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DIF120SIC053-AQ | Hersteller : Diotec Semiconductor | MOSFET |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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DIF120SIC053-AQ | Hersteller : Diotec Electronics | DIF120SIC053-AQ |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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