DIJ006N90 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 16A; 37.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 37.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
| Anzahl | Preis |
|---|---|
| 29+ | 2.52 EUR |
| 32+ | 2.26 EUR |
| 50+ | 2 EUR |
| 250+ | 1.84 EUR |
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Technische Details DIJ006N90 DIOTEC SEMICONDUCTOR
Description: MOSFET, ITO-220AB, N, 900V, 6A,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2A, 10V, Power Dissipation (Max): 37.5W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ITO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V.
Weitere Produktangebote DIJ006N90
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DIJ006N90 | Hersteller : Diotec Semiconductor |
Description: MOSFET, ITO-220AB, N, 900V, 6A, Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2A, 10V Power Dissipation (Max): 37.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ITO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V |
Produkt ist nicht verfügbar |
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DIJ006N90 | Hersteller : Diotec Semiconductor |
MOSFETs TO-220AB, N, 900V, 6A, m, 175C |
Produkt ist nicht verfügbar |