
DIT080N08-AQ DIOTEC SEMICONDUCTOR

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 85V
Drain current: 51A
Pulsed drain current: 480A
Power dissipation: 62.5W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
34+ | 2.13 EUR |
38+ | 1.92 EUR |
40+ | 1.79 EUR |
500+ | 1.43 EUR |
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Technische Details DIT080N08-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET TO-220AB N 80V 80A, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-220AB, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 85 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DIT080N08-AQ nach Preis ab 1.79 EUR bis 2.13 EUR
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DIT080N08-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 85V; 51A; Idm: 480A; 62.5W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 85V Drain current: 51A Pulsed drain current: 480A Power dissipation: 62.5W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: max. 1.2mm Application: automotive industry |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT080N08-AQ | Hersteller : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DIT080N08-AQ | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |