DIT100N10 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 380A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Pulsed drain current: 380A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: max. 1.2mm
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.09 EUR |
| 50+ | 1.7 EUR |
| 61+ | 1.42 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.11 EUR |
Produktrezensionen
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Technische Details DIT100N10 DIOTEC SEMICONDUCTOR
Description: MOSFET TO220AB N 100V 0.0099OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 50 V.
Weitere Produktangebote DIT100N10 nach Preis ab 1.36 EUR bis 4.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DIT100N10 | Diotec Semiconductor |
Description: MOSFET TO220AB N 100V 0.0099OHM Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 50 V |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT100N10 | Diotec Semiconductor |
MOSFETs MOSFET, TO-220AB, 100V, 100A, 175C, N |
auf Bestellung 1121 Stücke: Lieferzeit 10-14 Tag (e) |
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| DIT100N10 |
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Hersteller: Diotec Semiconductor
Description: MOSFET TO220AB N 100V 0.0099OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 50 V
Description: MOSFET TO220AB N 100V 0.0099OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 50 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.58 EUR |
| 50+ | 2.25 EUR |
| 100+ | 2.02 EUR |
| 500+ | 1.62 EUR |
| DIT100N10 |
|
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, TO-220AB, 100V, 100A, 175C, N
MOSFETs MOSFET, TO-220AB, 100V, 100A, 175C, N
auf Bestellung 1121 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.62 EUR |
| 2500+ | 1.38 EUR |
| 5000+ | 1.36 EUR |