
DIT120N08 DIOTEC SEMICONDUCTOR

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB
Case: TO220AB
Gate charge: 163nC
Heatsink thickness: max. 1.2mm
On-state resistance: 4.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 84A
Type of transistor: N-MOSFET
Power dissipation: 220W
Pulsed drain current: 450A
Kind of channel: enhancement
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 798 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
31+ | 2.36 EUR |
51+ | 1.42 EUR |
76+ | 0.94 EUR |
80+ | 0.9 EUR |
5000+ | 0.89 EUR |
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Technische Details DIT120N08 DIOTEC SEMICONDUCTOR
Description: MOSFET TO220AB N 80V 0.0049OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.
Weitere Produktangebote DIT120N08 nach Preis ab 0.9 EUR bis 4 EUR
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DIT120N08 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB Case: TO220AB Gate charge: 163nC Heatsink thickness: max. 1.2mm On-state resistance: 4.9mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 84A Type of transistor: N-MOSFET Power dissipation: 220W Pulsed drain current: 450A Kind of channel: enhancement Mounting: THT Kind of package: tube Polarisation: unipolar |
auf Bestellung 798 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT120N08 | Hersteller : Diotec Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT120N08 | Hersteller : Diotec Semiconductor |
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auf Bestellung 281 Stücke: Lieferzeit 10-14 Tag (e) |
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DIT120N08 | Hersteller : Diotec Electronics |
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auf Bestellung 946 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT120N08 | Hersteller : Diotec Semiconductor |
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