DIT120N08 Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET TO220AB N 80V 0.0049OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Description: MOSFET TO220AB N 80V 0.0049OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.46 EUR |
50+ | 1.99 EUR |
100+ | 1.64 EUR |
500+ | 1.38 EUR |
1000+ | 1.17 EUR |
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Technische Details DIT120N08 Diotec Semiconductor
Description: MOSFET TO220AB N 80V 0.0049OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V.
Weitere Produktangebote DIT120N08 nach Preis ab 0.93 EUR bis 6.76 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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DIT120N08 | Hersteller : Diotec Semiconductor | MOSFET MOSFET, TO-220AB, 80V, 120A, 175C, N |
auf Bestellung 960 Stücke: Lieferzeit 14-28 Tag (e) |
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DIT120N08 | Hersteller : Diotec Semiconductor | Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT120N08 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Pulsed drain current: 450A Drain-source voltage: 80V Drain current: 84A On-state resistance: 4.9mΩ Type of transistor: N-MOSFET Power dissipation: 220W Polarisation: unipolar Gate charge: 163nC Heatsink thickness: max. 1.2mm Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 518 Stücke: Lieferzeit 7-14 Tag (e) |
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DIT120N08 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 84A; Idm: 450A; 220W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Pulsed drain current: 450A Drain-source voltage: 80V Drain current: 84A On-state resistance: 4.9mΩ Type of transistor: N-MOSFET Power dissipation: 220W Polarisation: unipolar Gate charge: 163nC Heatsink thickness: max. 1.2mm Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 518 Stücke: Lieferzeit 14-21 Tag (e) |
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DIT120N08 | Hersteller : Diotec Electronics | Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 946 Stücke: Lieferzeit 14-21 Tag (e) |
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