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DIT195N08

DIT195N08 Diotec Semiconductor

dit195n08.pdf Hersteller: Diotec Semiconductor
Description: MOSFET TO220AB N 85V 0.0035OHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16880 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.66 EUR
50+ 5.27 EUR
100+ 4.52 EUR
500+ 4.02 EUR
1000+ 3.44 EUR
Mindestbestellmenge: 4
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Technische Details DIT195N08 Diotec Semiconductor

Description: MOSFET TO220AB N 85V 0.0035OHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 4.95mOhm @ 40A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 85 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16880 pF @ 25 V.

Weitere Produktangebote DIT195N08 nach Preis ab 1.86 EUR bis 2.67 EUR

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Preis ohne MwSt
DIT195N08 DIT195N08 Hersteller : Diotec Semiconductor dit195n08.pdf Trans MOSFET N-CH 85V 195A 3-Pin(3+Tab) TO-220AB Cardboard/Tube
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
DIT195N08 Hersteller : DIOTEC SEMICONDUCTOR dit195n08.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 148A; Idm: 850A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 300W
Drain-source voltage: 85V
Drain current: 148A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 850A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 485 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.67 EUR
31+ 2.36 EUR
36+ 2.02 EUR
38+ 1.9 EUR
250+ 1.86 EUR
Mindestbestellmenge: 27
DIT195N08 Hersteller : DIOTEC SEMICONDUCTOR dit195n08.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 85V; 148A; Idm: 850A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Heatsink thickness: max. 1.2mm
Power dissipation: 300W
Drain-source voltage: 85V
Drain current: 148A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 850A
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.67 EUR
31+ 2.36 EUR
36+ 2.02 EUR
38+ 1.9 EUR
250+ 1.86 EUR
Mindestbestellmenge: 27
DIT195N08 DIT195N08 Hersteller : Diotec Semiconductor dit195n08-2577313.pdf MOSFET MOSFET, TO-220AB, 85V, 195A, 175C, N
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