DIW018N65

DIW018N65 DIOTEC SEMICONDUCTOR


pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FA5E6E43C8380D6&compId=diw018n65.pdf?ci_sign=671d25dadfd454a5e33fdb29e26c713f41cdb719 Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 70 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.84 EUR
23+3.19 EUR
24+3.02 EUR
120+3 EUR
450+2.9 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DIW018N65 DIOTEC SEMICONDUCTOR

Description: MOSFET, TO-247-3L, N, 650V, 18A,, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Power Dissipation (Max): 155W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 380 V.

Weitere Produktangebote DIW018N65 nach Preis ab 3.02 EUR bis 8.73 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DIW018N65 DIW018N65 Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FA5E6E43C8380D6&compId=diw018n65.pdf?ci_sign=671d25dadfd454a5e33fdb29e26c713f41cdb719 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.84 EUR
23+3.19 EUR
24+3.02 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DIW018N65 DIW018N65 Hersteller : Diotec Semiconductor diw018n65.pdf Description: MOSFET, TO-247-3L, N, 650V, 18A,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 380 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
30+4.92 EUR
120+4.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH