Technische Details DIW052N60K Diotec Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 36.7A; Idm: 208A; 300W; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 36.7A, Pulsed drain current: 208A, Power dissipation: 300W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 55mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Version: ESD.
Weitere Produktangebote DIW052N60K
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DIW052N60K | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 36.7A; Idm: 208A; 300W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36.7A Pulsed drain current: 208A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
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