| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.8 EUR |
| 10+ | 10.39 EUR |
| 120+ | 8.82 EUR |
| 510+ | 7.63 EUR |
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Technische Details DIW065SIC080 Diotec Semiconductor
Description: SIC MOSFET, TO-247-3L, N, 36A, 6, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V, Power Dissipation (Max): 175W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 600 V.
Weitere Produktangebote DIW065SIC080 nach Preis ab 15.72 EUR bis 30.76 EUR
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DIW065SIC080 | Diotec Semiconductor |
 Description: SIC MOSFET, TO-247-3L, N, 36A, 6Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V Power Dissipation (Max): 175W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 600 V |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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| DIW065SIC080 |
|
Hersteller: Diotec Semiconductor
Description: SIC MOSFET, TO-247-3L, N, 36A, 6
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 600 V
Description: SIC MOSFET, TO-247-3L, N, 36A, 6
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 600 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.76 EUR |
| 30+ | 20.72 EUR |
| 120+ | 15.72 EUR |