DIW065SIC080 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 175W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 75nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.24 EUR |
| 12+ | 6.01 EUR |
| 30+ | 5.86 EUR |
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Technische Details DIW065SIC080 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 26A, Pulsed drain current: 100A, Power dissipation: 175W, Case: TO247-3, Gate-source voltage: -5...18V, On-state resistance: 75mΩ, Mounting: THT, Gate charge: 75nC, Kind of channel: enhancement, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DIW065SIC080 nach Preis ab 6.01 EUR bis 8.24 EUR
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DIW065SIC080 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 100A Power dissipation: 175W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 75mΩ Mounting: THT Gate charge: 75nC Kind of channel: enhancement Kind of package: tube |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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