DIW065SIC080 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate-source voltage: -5...18V
Pulsed drain current: 100A
Drain-source voltage: 650V
Drain current: 26A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 175W
Polarisation: unipolar
Gate charge: 75nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.12 EUR |
| 12+ | 5.98 EUR |
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Technische Details DIW065SIC080 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W, Technology: SiC, Mounting: THT, Case: TO247-3, Kind of package: tube, Gate-source voltage: -5...18V, Pulsed drain current: 100A, Drain-source voltage: 650V, Drain current: 26A, On-state resistance: 75mΩ, Type of transistor: N-MOSFET, Power dissipation: 175W, Polarisation: unipolar, Gate charge: 75nC, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DIW065SIC080 nach Preis ab 5.98 EUR bis 9.12 EUR
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DIW065SIC080 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 100A; 175W Technology: SiC Mounting: THT Case: TO247-3 Kind of package: tube Gate-source voltage: -5...18V Pulsed drain current: 100A Drain-source voltage: 650V Drain current: 26A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 175W Polarisation: unipolar Gate charge: 75nC Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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