DIW085N06 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 60A; Idm: 340A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 60A
Pulsed drain current: 340A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 60A; Idm: 340A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 60A
Pulsed drain current: 340A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.9 EUR |
| 17+ | 4.4 EUR |
| 22+ | 3.3 EUR |
| 23+ | 3.12 EUR |
| 600+ | 3.03 EUR |
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Technische Details DIW085N06 DIOTEC SEMICONDUCTOR
Description: IC, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 40A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3704 pF @ 34 V.
Weitere Produktangebote DIW085N06 nach Preis ab 3.12 EUR bis 4.9 EUR
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DIW085N06 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 60A; Idm: 340A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 60A Pulsed drain current: 340A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: THT Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| DIW085N06 | Hersteller : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 40A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3704 pF @ 34 V |
Produkt ist nicht verfügbar |
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DIW085N06 | Hersteller : Diotec Semiconductor | MOSFET MOSFET, TO-247-3L, 65V, 85A, 150C, N |
Produkt ist nicht verfügbar |