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DIW085N06

DIW085N06 DIOTEC SEMICONDUCTOR

diw085n06.pdf
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 60A; Idm: 340A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 60A
Pulsed drain current: 340A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.32 EUR
19+3.88 EUR
Mindestbestellmenge: 17
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Technische Details DIW085N06 DIOTEC SEMICONDUCTOR

Description: MOSFET TO-247-3L N 65V 85A, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 40A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3704 pF @ 34 V.

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DIW085N06 Hersteller : Diotec Semiconductor diw085n06.pdf Description: MOSFET TO-247-3L N 65V 85A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 40A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3704 pF @ 34 V
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DIW085N06 DIW085N06 Hersteller : Diotec Semiconductor diw085n06.pdf MOSFETs MOSFET, TO-247-3L, 65V, 85A, 150C, N
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