DIW120SIC022-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 340W
Polarisation: unipolar
Kind of package: tube
Gate charge: 269nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 63.28 EUR |
| 30+ | 61.55 EUR |
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Technische Details DIW120SIC022-AQ DIOTEC SEMICONDUCTOR
Description: SIC MOSFET, TO-247-3L, N, 120A,, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 4V @ 23.5mA, Supplier Device Package: TO-247, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote DIW120SIC022-AQ nach Preis ab 61.55 EUR bis 357.61 EUR
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DIW120SIC022-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W Drain-source voltage: 1.2kV Drain current: 85A On-state resistance: 28mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 340W Polarisation: unipolar Kind of package: tube Gate charge: 269nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A Mounting: THT Case: TO247-3 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DIW120SIC022-AQ | Hersteller : Diotec Semiconductor |
Description: SIC MOSFET, TO-247-3L, N, 120A, Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 4V @ 23.5mA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +18V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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DIW120SIC022-AQ | Hersteller : Diotec Semiconductor |
SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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DIW120SIC022-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DIW120SIC022-AQ - Siliziumkarbid-MOSFET, Eins, n-Kanal, 120 A, 1.2 kV, 0.0223 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 340W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0223ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |