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DIW120SIC022-AQ DIOTEC SEMICONDUCTOR


diw120sic022.pdf
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 340W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 269nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2+75.59 EUR
5+70.69 EUR
30+66.12 EUR
Mindestbestellmenge: 2 Stücke
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Technische Details DIW120SIC022-AQ DIOTEC SEMICONDUCTOR

Description: SIC MOSFET, TO-247-3L, N, 120A,, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 4V @ 23.5mA, Supplier Device Package: TO-247, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +18V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V, Qualification: AEC-Q101.

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DIW120SIC022-AQ DIW120SIC022-AQ Diotec Semiconductor diw120sic022.pdf Description: SIC MOSFET, TO-247-3L, N, 120A,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23.5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
1+100.72 EUR
30+94.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DIW120SIC022-AQ DIW120SIC022-AQ Diotec Semiconductor diw120sic022.pdf SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
1+105.2 EUR
10+85.82 EUR
120+85.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DIW120SIC022-AQ diw120sic022.pdf
Hersteller: Diotec Semiconductor
Description: SIC MOSFET, TO-247-3L, N, 120A,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 18V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23.5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4817 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+100.72 EUR
30+94.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DIW120SIC022-AQ diw120sic022.pdf
Hersteller: Diotec Semiconductor
SiC MOSFETs SiC MOSFET, TO-247-3L, 0, 120A, 1200V, 0.0223?, Automotive
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+105.2 EUR
10+85.82 EUR
120+85.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH