DIW120SIC023-AQ DIOTEC
Hersteller: DIOTEC
Description: DIOTEC - DIW120SIC023-AQ - Siliziumkarbid-MOSFET, Eins, n-Kanal, 125 A, 1.2 kV, 0.023 ohm, TO-247
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 125A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.9V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 600W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.023ohm
| Anzahl | Privatkunde |
|---|---|
| 2+ | 156.21 EUR |
| 5+ | 139.37 EUR |
| 10+ | 123.4 EUR |
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Technische Details DIW120SIC023-AQ DIOTEC
Description: DIOTEC - DIW120SIC023-AQ - Siliziumkarbid-MOSFET, Eins, n-Kanal, 125 A, 1.2 kV, 0.023 ohm, TO-247, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 125A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.9V, MOSFET-Modul-Konfiguration: Eins, Verlustleistung: 600W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.023ohm.
Weitere Produktangebote DIW120SIC023-AQ nach Preis ab 128.83 EUR bis 162.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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DIW120SIC023-AQ | Diotec Semiconductor |
Description: MOSFET TO-247-3L N 130A 1200V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 125A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 250µA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
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| DIW120SIC023-AQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET TO-247-3L N 130A 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 1000 V
Qualification: AEC-Q101
Description: MOSFET TO-247-3L N 130A 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 162.61 EUR |
| 30+ | 128.83 EUR |