DIW120SIC059-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 121nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...18V
Pulsed drain current: 100A
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.58 EUR |
| 10+ | 24.57 EUR |
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Technische Details DIW120SIC059-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET TO-247-3L N 65A 1200V, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 9.5mA, Supplier Device Package: TO-247, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote DIW120SIC059-AQ nach Preis ab 24.57 EUR bis 185.38 EUR
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DIW120SIC059-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 278W Polarisation: unipolar Gate charge: 121nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...18V Pulsed drain current: 100A Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 65mΩ Type of transistor: N-MOSFET |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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DIW120SIC059-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET TO-247-3L N 65A 1200V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 9.5mA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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DIW120SIC059-AQ | Hersteller : Diotec Semiconductor |
MOSFET |
auf Bestellung 450 Stücke: Lieferzeit 14-28 Tag (e) |
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