DIW120SIC059-AQ DIOTEC
Hersteller: DIOTEC
Description: DIOTEC - DIW120SIC059-AQ - Siliziumkarbid-MOSFET, Eins, n-Kanal, 65 A, 1.2 kV, 0.053 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 65A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 278W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.053ohm
SVHC: No SVHC (27-Jun-2024)
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Technische Details DIW120SIC059-AQ DIOTEC
Description: DIOTEC - DIW120SIC059-AQ - Siliziumkarbid-MOSFET, Eins, n-Kanal, 65 A, 1.2 kV, 0.053 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 65A, hazardous: false, rohsPhthalatesCompliant: YES, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 278W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.053ohm, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote DIW120SIC059-AQ nach Preis ab 40.58 EUR bis 149.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DIW120SIC059-AQ | Diotec Semiconductor |
Description: MOSFET TO-247-3L N 65A 1200V Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 9.5mA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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DIW120SIC059-AQ | Diotec Semiconductor |
MOSFET |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DIW120SIC059-AQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET TO-247-3L N 65A 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 9.5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V
Qualification: AEC-Q101
Description: MOSFET TO-247-3L N 65A 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 33A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 9.5mA
Supplier Device Package: TO-247
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 52.19 EUR |
| 30+ | 43.28 EUR |
| 120+ | 40.58 EUR |
| DIW120SIC059-AQ |
|
Hersteller: Diotec Semiconductor
MOSFET
MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 149.33 EUR |
| 10+ | 116.74 EUR |
| 100+ | 70.02 EUR |
| 500+ | 69.33 EUR |
| 1000+ | 67.16 EUR |
| 2500+ | 59.38 EUR |
| 5000+ | 55.81 EUR |