DIW170SIC049 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 47A
Pulsed drain current: 150A
Power dissipation: 357W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 81mΩ
Mounting: THT
Gate charge: 179nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 18.83 EUR |
| 5+ | 17.8 EUR |
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Technische Details DIW170SIC049 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 47A, Pulsed drain current: 150A, Power dissipation: 357W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 81mΩ, Mounting: THT, Gate charge: 179nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DIW170SIC049 nach Preis ab 17.8 EUR bis 18.83 EUR
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DIW170SIC049 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 47A Pulsed drain current: 150A Power dissipation: 357W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 81mΩ Mounting: THT Gate charge: 179nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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