| Anzahl | Preis |
|---|---|
| 1+ | 37.29 EUR |
| 10+ | 27.16 EUR |
| 120+ | 24.36 EUR |
| 510+ | 20.93 EUR |
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Technische Details DIW170SIC049 Diotec Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: THT, Technology: SiC, Case: TO247-3, Kind of package: tube, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 179nC, On-state resistance: 81mΩ, Drain current: 47A, Pulsed drain current: 150A, Power dissipation: 357W, Drain-source voltage: 1.7kV.
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DIW170SIC049 | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Technology: SiC Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 179nC On-state resistance: 81mΩ Drain current: 47A Pulsed drain current: 150A Power dissipation: 357W Drain-source voltage: 1.7kV |
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