
DIW170SIC070 DIOTEC SEMICONDUCTOR

Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 45A
Pulsed drain current: 140A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 18.2 EUR |
6+ | 12.08 EUR |
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Technische Details DIW170SIC070 DIOTEC SEMICONDUCTOR
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 45A, Pulsed drain current: 140A, Power dissipation: 416W, Case: TO247-3, Gate-source voltage: -5...20V, On-state resistance: 28mΩ, Mounting: THT, Gate charge: 80nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DIW170SIC070 nach Preis ab 12.08 EUR bis 18.2 EUR
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DIW170SIC070 | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 45A Pulsed drain current: 140A Power dissipation: 416W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 28mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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