DIW170SIC070 Diotec Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.2 EUR |
| 10+ | 25.7 EUR |
| 120+ | 22.93 EUR |
| 510+ | 16.76 EUR |
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Technische Details DIW170SIC070 Diotec Semiconductor
Description: SICFET N-CH 1700V 70A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V.
Weitere Produktangebote DIW170SIC070 nach Preis ab 16.26 EUR bis 30.23 EUR
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DIW170SIC070 | Diotec Semiconductor |
 Description: SICFET N-CH 1700V 70A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V |
auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| DIW170SIC070 |
|
Hersteller: Diotec Semiconductor
Description: SICFET N-CH 1700V 70A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V
Description: SICFET N-CH 1700V 70A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 30.23 EUR |
| 30+ | 18.71 EUR |
| 120+ | 16.26 EUR |