DIW170SIC070 Diotec Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 25.38 EUR |
| 10+ | 21.6 EUR |
| 120+ | 19.27 EUR |
| 510+ | 14.08 EUR |
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Technische Details DIW170SIC070 Diotec Semiconductor
Description: SICFET N-CH 1700V 70A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V.
Weitere Produktangebote DIW170SIC070 nach Preis ab 13.66 EUR bis 25.4 EUR
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DIW170SIC070 | Hersteller : Diotec Semiconductor |
 Description: SICFET N-CH 1700V 70A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V |
auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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| DIW170SIC070 | Hersteller : Diotec |
SIC MOSFET, TO-247-3L, N, 70A, 1 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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DIW170SIC070 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Technology: SiC Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 80nC On-state resistance: 28mΩ Drain current: 45A Pulsed drain current: 140A Power dissipation: 416W Drain-source voltage: 1.7kV |
Produkt ist nicht verfügbar |