Technische Details DIW170SIC070 Diotec
Description: SICFET N-CH 1700V 70A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V.
Weitere Produktangebote DIW170SIC070
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DIW170SIC070 | Diotec Semiconductor |
 Description: SICFET N-CH 1700V 70A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V |
Produkt ist nicht verfügbar |
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DIW170SIC070 | Diotec Semiconductor |
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175DegC |
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DIW170SIC070 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W Pulsed drain current: 140A Power dissipation: 416W Gate charge: 80nC Polarisation: unipolar Technology: SiC Drain current: 45A Kind of channel: enhancement Drain-source voltage: 1.7kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V Kind of package: tube Case: TO247-3 On-state resistance: 28mΩ Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DIW170SIC070 |
|
Hersteller: Diotec Semiconductor
Description: SICFET N-CH 1700V 70A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V
Description: SICFET N-CH 1700V 70A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DIW170SIC070 |
|
Hersteller: Diotec Semiconductor
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175DegC
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175DegC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DIW170SIC070 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W
Pulsed drain current: 140A
Power dissipation: 416W
Gate charge: 80nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
On-state resistance: 28mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W
Pulsed drain current: 140A
Power dissipation: 416W
Gate charge: 80nC
Polarisation: unipolar
Technology: SiC
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
Kind of package: tube
Case: TO247-3
On-state resistance: 28mΩ
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH