DIW170SIC070 Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: SIC MOSFET, TO-247-3L, N, 70A, 1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.33 EUR |
| 30+ | 15.67 EUR |
| 120+ | 13.61 EUR |
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Technische Details DIW170SIC070 Diotec Semiconductor
Description: SIC MOSFET, TO-247-3L, N, 70A, 1, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 20V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 1200 V.
Weitere Produktangebote DIW170SIC070 nach Preis ab 20.36 EUR bis 59.82 EUR
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DIW170SIC070 | Hersteller : Diotec Semiconductor |
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175°C |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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DIW170SIC070 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 45A; Idm: 140A; 416W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 45A Pulsed drain current: 140A Power dissipation: 416W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 28mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
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