DIW170SIC750 Diotec Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 6+ | 71.1 EUR |
| 12+ | 35.94 EUR |
| 30+ | 14.82 EUR |
| 60+ | 10.07 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6 Stücke
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Technische Details DIW170SIC750 Diotec Semiconductor
Description: SICFET N-CH 1700V 5A TO-247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 20V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 1000 V.
Weitere Produktangebote DIW170SIC750
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DIW170SIC750 | DIOTEC SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 62W Pulsed drain current: 6A Power dissipation: 62W Polarisation: unipolar Technology: SiC Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 1.7kV Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 0.75Ω Mounting: THT |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DIW170SIC750 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 62W
Pulsed drain current: 6A
Power dissipation: 62W
Polarisation: unipolar
Technology: SiC
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.75Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 62W
Pulsed drain current: 6A
Power dissipation: 62W
Polarisation: unipolar
Technology: SiC
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.75Ω
Mounting: THT
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)