DIW170SIC750 DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 62W
Case: TO247-3
Mounting: THT
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 0.75Ω
Pulsed drain current: 6A
Power dissipation: 62W
Polarisation: unipolar
Technology: SiC
Drain current: 3.5A
Kind of channel: enhancement
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Technische Details DIW170SIC750 DIOTEC SEMICONDUCTOR
Description: DIW170SIC750, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 5mA, Power Dissipation (Max): 62W (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 20V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel.
Weitere Produktangebote DIW170SIC750
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DIW170SIC750 | Diotec Semiconductor |
Description: DIW170SIC750 Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 20V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DIW170SIC750 |
|
Hersteller: Diotec Semiconductor
Description: DIW170SIC750
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Description: DIW170SIC750
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 5mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 20V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH