Technische Details DIW300N10 Diotec Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 100V; 300A; Idm: 1200A; 250W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 300A, Pulsed drain current: 1.2kA, Power dissipation: 250W, Case: TO247-3, On-state resistance: 1.6mΩ, Mounting: THT, Kind of channel: enhancement.
Weitere Produktangebote DIW300N10
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DIW300N10 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 100V; 300A; Idm: 1200A; 250W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Pulsed drain current: 1.2kA Power dissipation: 250W Case: TO247-3 On-state resistance: 1.6mΩ Mounting: THT Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DIW300N10 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 100V; 300A; Idm: 1200A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 250W
Case: TO247-3
On-state resistance: 1.6mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 100V; 300A; Idm: 1200A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 1.2kA
Power dissipation: 250W
Case: TO247-3
On-state resistance: 1.6mΩ
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH