| Anzahl | Preis |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.46 EUR |
| 5000+ | 0.45 EUR |
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Technische Details DMC1016UPD-13 Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 12V, 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A, Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V, Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active.
Weitere Produktangebote DMC1016UPD-13 nach Preis ab 0.54 EUR bis 1.83 EUR
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DMC1016UPD-13 | Diodes Incorporated |
 Description: MOSFET N/P-CH 12V 9.5A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active |
auf Bestellung 2504 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMC1016UPD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
auf Bestellung 2504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 16+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.54 EUR |