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DMC1018UPD-13

DMC1018UPD-13 Diodes Incorporated

DMC1018UPD.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.38 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMC1018UPD-13 Diodes Incorporated

Description: MOSFET N/P-CH 12V 9.5A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 12V, 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A, Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMC1018UPD-13 nach Preis ab 0.41 EUR bis 1.30 EUR

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DMC1018UPD-13 DMC1018UPD-13 Hersteller : Diodes Incorporated DMC1018UPD.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 2280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.29 EUR
10+0.88 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.44 EUR
2500+0.41 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMC1018UPD-13 DMC1018UPD-13 Hersteller : Diodes Incorporated DMC1018UPD.pdf Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
21+0.87 EUR
100+0.60 EUR
500+0.52 EUR
1000+0.47 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
DMC1018UPD-13 DMC1018UPD-13 Hersteller : Diodes Inc dmc1018upd.pdf Trans MOSFET N/P-CH 12V/20V 9.5A/6.9A 8-Pin PowerDI EP T/R
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