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DMC1018UPD-13

DMC1018UPD-13 Diodes Incorporated

DMC1018UPD.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.4 EUR
5000+ 0.38 EUR
12500+ 0.36 EUR
25000+ 0.35 EUR
Mindestbestellmenge: 2500
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Technische Details DMC1018UPD-13 Diodes Incorporated

Description: MOSFET N/P-CH 12V 9.5A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 12V, 20V, Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A, Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMC1018UPD-13 nach Preis ab 0.38 EUR bis 1.07 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMC1018UPD-13 DMC1018UPD-13 Hersteller : Diodes Incorporated DMC1018UPD.pdf MOSFET MOSFET BVDSS: 8V-24V
auf Bestellung 2320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.92 EUR
100+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
2500+ 0.4 EUR
5000+ 0.38 EUR
Mindestbestellmenge: 3
DMC1018UPD-13 DMC1018UPD-13 Hersteller : Diodes Incorporated DMC1018UPD.pdf Description: MOSFET N/P-CH 12V 9.5A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
20+ 0.92 EUR
100+ 0.64 EUR
500+ 0.53 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 17
DMC1018UPD-13 DMC1018UPD-13 Hersteller : Diodes Inc dmc1018upd.pdf Trans MOSFET N/P-CH 12V/20V 9.5A/6.9A 8-Pin PowerDI EP T/R
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