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DMC1029UFDB-7

DMC1029UFDB-7 Diodes Incorporated

DMC1029UFDB.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.43 EUR
9000+0.41 EUR
Mindestbestellmenge: 3000
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Technische Details DMC1029UFDB-7 Diodes Incorporated

Description: MOSFET N/P-CH 12V 5.6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V, Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).

Weitere Produktangebote DMC1029UFDB-7 nach Preis ab 0.46 EUR bis 1.85 EUR

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DMC1029UFDB-7 DMC1029UFDB-7 Hersteller : Diodes Incorporated DMC1029UFDB.pdf MOSFETs 20V Comp Pair Enh 8Vgs 914pF 10.5nC
auf Bestellung 11973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.29 EUR
10+1.03 EUR
100+0.71 EUR
500+0.57 EUR
1000+0.52 EUR
3000+0.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMC1029UFDB-7 DMC1029UFDB-7 Hersteller : Diodes Incorporated DMC1029UFDB.pdf Description: MOSFET N/P-CH 12V 5.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 140990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
16+1.17 EUR
100+0.77 EUR
500+0.60 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
DMC1029UFDB-7 Hersteller : DIODES INCORPORATED DMC1029UFDB.pdf DMC1029UFDB-7 Multi channel transistors
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