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DMC1030UFDBQ-13

DMC1030UFDBQ-13 Diodes Incorporated


DMC1030UFDBQ_Rev2-3_Aug2022.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
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Technische Details DMC1030UFDBQ-13 Diodes Incorporated

Description: MOSFET N/P-CH 12V 5.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.36W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.1A, Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.

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DMC1030UFDBQ-13 DMC1030UFDBQ-13 Hersteller : Diodes Incorporated DMC1030UFDBQ_Rev2-3_Aug2022.pdf MOSFETs MOSFET BVDSS:
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