DMC1030UFDBQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 12V 5.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.33 EUR |
| 9000+ | 0.3 EUR |
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Technische Details DMC1030UFDBQ-7 Diodes Incorporated
Description: MOSFET N/P-CH 12V 5.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.36W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 5.1A, Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMC1030UFDBQ-7 nach Preis ab 0.3 EUR bis 1.02 EUR
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DMC1030UFDBQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: |
auf Bestellung 28850 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC1030UFDBQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 12V 5.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 34501 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMC1030UFDBQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMC1030UFDBQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |