Produkte > DIODES INCORPORATED > DMC2025UFDBQ-7
DMC2025UFDBQ-7

DMC2025UFDBQ-7 Diodes Incorporated

DMC2025UFDBQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V 6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.58 EUR
100+0.34 EUR
500+0.28 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMC2025UFDBQ-7 Diodes Incorporated

Description: MOSFET N/P-CH 20V 6A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMC2025UFDBQ-7 nach Preis ab 0.17 EUR bis 0.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMC2025UFDBQ-7 Hersteller : Diodes Incorporated DMC2025UFDB-1366234.pdf MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.87 EUR
10+0.55 EUR
100+0.28 EUR
1000+0.25 EUR
3000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMC2025UFDBQ-7 Hersteller : Diodes Inc dmc2025ufdbq.pdf MOSFET BVDSS: 8V24V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMC2025UFDBQ-7 Hersteller : Diodes Zetex DMC2025UFDBQ.pdf MOSFET BVDSS: 8V24V U-DFN2020-6 T&R 3K
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMC2025UFDBQ-7 DMC2025UFDBQ-7 Hersteller : Diodes Incorporated DMC2025UFDBQ.pdf Description: MOSFET N/P-CH 20V 6A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH