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DMC25D0UVT-7

DMC25D0UVT-7 Diodes Incorporated

DMC25D0UVT.pdf Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
75000+ 0.19 EUR
Mindestbestellmenge: 3000
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Technische Details DMC25D0UVT-7 Diodes Incorporated

Description: MOSFET N/P-CH 25V/30V TSOT23, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 25V, 30V, Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A, Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-23-6, Part Status: Active.

Weitere Produktangebote DMC25D0UVT-7 nach Preis ab 0.22 EUR bis 0.67 EUR

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DMC25D0UVT-7 DMC25D0UVT-7 Hersteller : Diodes Incorporated DMC25D0UVT.pdf MOSFET 20V Enh Mode FET
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.67 EUR
10+ 0.58 EUR
100+ 0.44 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
3000+ 0.24 EUR
9000+ 0.22 EUR
Mindestbestellmenge: 5
DMC25D0UVT-7 DMC25D0UVT-7 Hersteller : Diodes Incorporated DMC25D0UVT.pdf Description: MOSFET N/P-CH 25V/30V TSOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 25V, 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 3.2A
Input Capacitance (Ciss) (Max) @ Vds: 26.2pF @ 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Part Status: Active
auf Bestellung 189674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
31+ 0.58 EUR
100+ 0.4 EUR
500+ 0.31 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 27