DMC3016LNS-13 Diodes Incorporated

Description: MOSFET N/P-CH 30V 9A PWRDI3333, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.3W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).