
DMC3016LNS-13 Diodes Incorporated

Description: MOSFET N/P-CH 30V 9A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Qualification: AEC-Q101
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Technische Details DMC3016LNS-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 9A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 6.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1184pF @ 15V, 1188pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 10V, 28mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Qualification: AEC-Q101.
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DMC3016LNS-13 | Hersteller : Diodes Incorporated |
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