DMC3016LSD-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.34 EUR |
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Technische Details DMC3016LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.2A/6.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A, Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V, Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMC3016LSD-13 nach Preis ab 0.24 EUR bis 1.47 EUR
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DMC3016LSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Drain current: 8.2/-6.2A Kind of channel: enhanced Drain-source voltage: 30/-30V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 0.028/0.016Ω Mounting: SMD Power dissipation: 1.2W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1665 Stücke: Lieferzeit 7-14 Tag (e) |
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DMC3016LSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Drain current: 8.2/-6.2A Kind of channel: enhanced Drain-source voltage: 30/-30V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 0.028/0.016Ω Mounting: SMD Power dissipation: 1.2W Polarisation: unipolar |
auf Bestellung 1665 Stücke: Lieferzeit 14-21 Tag (e) |
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DMC3016LSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.2A/6.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 12465 Stücke: Lieferzeit 10-14 Tag (e) |
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DMC3016LSD-13 | Hersteller : Diodes Incorporated |
MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC |
auf Bestellung 4910 Stücke: Lieferzeit 14-28 Tag (e) |
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DMC3016LSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N/P-CH 30V 8.2A/6.2A 8-Pin SO T/R |
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