Technische Details DMC3032LFDB-13 Diodes Zetex
Description: MOSFET N/P-CH 30V 5.3A 6UDFN, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Weitere Produktangebote DMC3032LFDB-13
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DMC3032LFDB-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 5.3A 6UDFNPackaging: Bulk Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V, 336pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V, 7.8nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
Produkt ist nicht verfügbar |
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| DMC3032LFDB-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |

